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Gate-defined quantum dots in monolayer and bilayer WSe<sub>2</sub>: Part II, Measurement

ORAL

Abstract

Gate-defined quantum dots in monolayer and bilayer WSe2 are a platform for novel quantum transport and quantum optoelectronic investigations of WSe2, as well as for potential applications in coherent valleytronics. In this presentation, we discuss low-temperature electronic transport measurements of p-type gate-defined quantum dots in monolayer and bilayer WSe2. These devices are operated with gates above and below the WSe2 layer so that carriers are accumulated in the WSe2, then selectively depleted to define the dot. We report observations of Coulomb blockade as well as excited state spectroscopy of confined holes in WSe2 dots.

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Presenters

  • Shiva Davari Dolatabadi

    Physics, Univ of Arkansas-Fayetteville

Authors

  • Shiva Davari Dolatabadi

    Physics, Univ of Arkansas-Fayetteville

  • Jeb Stacy

    Physics, Univ of Arkansas-Fayetteville, University of Arkansas

  • Alejandro Mercado Tejerina

    Physics, Univ of Arkansas-Fayetteville

  • Jeremy Tull

    Physics, Univ of Arkansas-Fayetteville

  • Rabindra Basnet

    Physics, Univ of Arkansas-Fayetteville

  • Krishna Pandey

    Physics, Univ of Arkansas-Fayetteville, Univ of Arkansas-Fayetteville

  • Md Nabi

    Physics, Univ of Arkansas-Fayetteville

  • Kenji Watanabe

    National Institute for Materials Science, Japan, National Institute for Material Science, National Institute for Materials Science, National Institute for Materials Science, Tsukuba, Research Center for Functional Materials, NIMS, nims, Advanced Materials Laboratory, National Institute for Materials Science, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, NIMS, National Institute for Material Science - Japan, NIMS Tsukuba, National Institute for Materials Science, Namiki 1-1, Ibaraki 305-0044, Japan., National Institute for Materials Science (NIMS), National Institute for Materials Science,Tsukuba, Ibaraki 305-0047, Japan, Advanced Materials Laboratory, NIMS, Japan, National Institute for Materials Science,1-1 Namiki, Tsukuba, 305-0044, Japan, National Institute of Materials Science, National Institute for Materials Science, University of Tsukuba, National Institute for Materials Science, Tsukuba, Japan, National Institute for Material Science, Japan, National Institue for Material Science, Tsukuba, Advanced Materials Laboratory, NIMS, Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba 305-0044, Japan, Advanced Matrials Lab, NIMS, National Institute for Material Science, Tsukuba, Japan, National institute for materials science, NIMS-Tsukuba, NIMS, Japan, National Institute for Materials Science, Namiki Tsukuba Ibaraki, Japan, NIRM, Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan, Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki, Japan, Advanced Materials Laboratory, National Institute of Materials Science, Advanced Materials Laboratory, National Institute for Materials Science 1-1 Namiki, Tsukuba, 305-0044, Japan, National Institute of Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science (Japan), Physics, NIMS, National Institute of Materials Science, Japan, National Institute of Materials Science (NIMS), National Institute of Materials Science, Tsukuba, Ibaraki 305-0044, Japan, NIMS - Tsukuba

  • Takashi Taniguchi

    National Institute for Materials Science, Japan, National Institute for Material Science, National Institute for Materials Science, National Institute for Materials Science, Tsukuba, Research Center for Functional Materials, NIMS, nims, Advanced Materials Laboratory, National Institute for Materials Science, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan, NIMS, National Institute for Material Science - Japan, NIMS Tsukuba, National Institute for Materials Science, Namiki 1-1, Ibaraki 305-0044, Japan., National Institute for Materials Science (NIMS), National Institute for Materials Science,Tsukuba, Ibaraki 305-0047, Japan, Advanced Materials Laboratory, NIMS, Japan, National Institute for Materials Science,1-1 Namiki, Tsukuba, 305-0044, Japan, National Institute of Materials Science, National Institute for Materials Science, University of Tsukuba, National Institute for Materials Science, Tsukuba, Japan, National Institue for Material Science, Tsukuba, Advanced Materials Laboratory, NIMS, Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba 305-0044, Japan, Advanced Matrials Lab, NIMS, National Institute for Material Science, Tsukuba, Japan, National institute for materials science, NIMS-Tsukuba, NIMS, Japan, National Institute for Materials Science, Namiki Tsukuba Ibaraki, Japan, Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan, Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki, Japan, Advanced Materials Laboratory, National Institute of Materials Science, Advanced Materials Laboratory, National Institute for Materials Science 1-1 Namiki, Tsukuba, 305-0044, Japan, National Institute of Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan, National Institute for Material Science (Japan), Physics, NIMS, National Institute of Materials Science, Japan, National Institute of Materials Science, Tsukuba, Ibaraki 305-0044, Japan, NIMS - Tsukuba

  • Jin Hu

    Univ of Arkansas-Fayetteville, Physics, Univ of Arkansas-Fayetteville, University of Arkansas

  • Hugh Churchill

    Physics, University of Arkansas, Physics, Univ of Arkansas-Fayetteville, University of Arkansas