Temperature dependent resistivity in hole-doped Ba<sub>1−x</sub>K<sub>x</sub>Fe<sub>2</sub>As<sub>2</sub> subject to electron irradiation
ORAL
Abstract
Temperature dependence of in-plane and inter-plane electrical resistivity was studied in single crystals of hole doped iron based superconductor Ba1−xKxFe2As2 (0≤x≤1). Low temperature (20 K) irradiation with relativistic 2.5 MeV electrons was used to control residual resistivity of the samples. Matthiessen rule is found to be universally violated for all compositions and for both current flow directions. This is in stark contrast with electron doped Ba(Fe1−xCox)2As2 [1] and iso-electron substituted BaFe2(As1−xPx)2 [2].
Possible reasons for Matthiessen rule violation are discussed.
[1] R. Prozorov, et al. NPJ Quantum Materials, 4, 34 (2019).
[2] Yuta Mizukami, et al. J. Phys. Soc. Jpn. 86, 083706 (2017).
Possible reasons for Matthiessen rule violation are discussed.
[1] R. Prozorov, et al. NPJ Quantum Materials, 4, 34 (2019).
[2] Yuta Mizukami, et al. J. Phys. Soc. Jpn. 86, 083706 (2017).
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Presenters
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Makariy Tanatar
Ames laboratory, Ames, IA, Ames Lab
Authors
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Makariy Tanatar
Ames laboratory, Ames, IA, Ames Lab
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Yong Liu
Ames Laboratory, Iowa State University, Ames Lab
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T. A. Lograsso
Ames Lab
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Ruslan Prozorov
Ames Lab, Ames laboratory, Ames, IA, Ames Laboratory, Ames Laboratory and Iowa state University, Ames, USA, Iowa State University/Ames Laboratory
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Marcin Konczykowski
Ecole Polytechnique, Ecole Polytechnique, Palaiseau, France, Laboratoire des Solides Irradies, Ecole Polytechnique, LSI, Ecole Polytechnique, Laboratoire des solides irradiées, L'École Polytechnique
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Olivie Cavani
LSI, Ecole Polytechnique