Electronic and Optoelectronic Properties of Indium Tin Selenide (In_1-xSn_xSe)

Selenide based binary- and ternary-layered compounds show exotic physical properties beneficial for developing them for future electronic & opto-electronics based applications.¹ For example; few-layered Indium Selenide (InSe) has attracted attention due to presence of direct band gap and hence its impressive photo-responsive properties.¹ It was also shown that ternary layered alloys such as Copper Indium Selenide (CuIn₇Se₁₁) possess properties that can be harnessed for developing fast photodetectors.² In this talk, we will report on the electronic and optoelectronic properties of few-layered Indium Tin Selenide (In_1-xSn_xSe) presented. Specifically, a comparison of the key parameters associated with electronic and optoelectronic properties of In_1-xSn_xSe with x = 0, 0.05, 0.1 and 1 will be presented and discussed.
References:
1. M. Wasala et al., J. Mater. Chem. C 5, 11214-11225 (2017)
2. S. Ghosh et al., 2D Mater. 5, 015001 (2018)