Ultra-low switching Energy Organic Memories
ORAL
Abstract
Memory devices are responsible for a significant fraction of the energy consumed in electronic systems- typically 25% in a laptop and 50% in a server station. Reducing the energy consumption of memories is an important goal. For the evolving field of artificial intelligence the compatible devices must simulate a neuron. In the organic memristors based on Ru centred phenyl azo pyridine, spin coated on oxide surfaces, the device performance exceeds the ITRS roadmap specification significantly demonstrating the viability of this system for practical applications. More than that, the redox states of the molecules can be studied in operando using Raman and UV-Vis spectroscopies leading to a clear mechanistic understanding. By enhancing the interface fields the switching energies of the devices could approach atto Joules at sub-10 nm dimension. These molecular devices are extremely stable and reproducible- a significant improvement from conventional organic electronics.
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Presenters
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Thirumalai Venkatesan
Natl Univ of Singapore, Department of Physics, National University of Singapore
Authors
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Thirumalai Venkatesan
Natl Univ of Singapore, Department of Physics, National University of Singapore
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Sreetosh Goswami
Natl Univ of Singapore
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Sreebrata Goswami
Indian Association for the Cultivation of Science (IACS)