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Magnetic anisotropy in a single crystal antiferromagnetic thin film

ORAL

Abstract

Antiferromagnetic (AF) materials promise to show magnetization dynamics, including switching, at ultra-high frequency and thus are of immense interest for next generation memory and logic applications. Besides, spin waves in AF insulators propagate very efficiently. However, electrically reading the states of the AF materials is not easy. Recently, spin Hall magnetoresistance (SMR) has been identified as one of the promising ways to access the surface states of the AF insulators. In this work, we deposit α-Fe2O3 (200 nm)/Pt (6 nm) on (11-20) Al2O3. We measure SMR of Pt Hall bar on Fe2O3. Below Morin transition temperature, we observe positive and negative magnetoresistance in the Pt/Fe2O3 bilayers depending on the direction of the electrical currents at the spin flop transition. This identifies that SMR can clearly determine the anisotropy of thin film AF insulators. We will show the detail study of the dependence of magnetoresistance on angular fields at different temperatures. Our study reveals important physical phenomena in AF Fe2O3 thin film.

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Presenters

  • Saima Siddiqui

    University of Illinois at Urbana-Champaign

Authors

  • Saima Siddiqui

    University of Illinois at Urbana-Champaign

  • john pearson

    Argonne National Lab, Materials Science Division, Argonne National Laboratory, Argonne National Laboratory, Materials Science Division, Argonne Natl Lab, Argonne Natl Lab

  • Axel Hoffmann

    University of Illinois, Materials Science and Engineering, University of Illinois at Urbana Champaign, Argonne National Laboratory, University of Illinois Urbana-Champaign, University of Illinois at Urbana-Champaign, Materials Science and Engineering, University of Illinois at Urbana-Champaign, Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Materials Science Division, Argonne National Laboratory, Argonne Natl Lab