Deal-Grove-like thermal oxidation of Si (001) buried under a thin layer of SrTiO<sub>3 </sub>
ORAL
Abstract
Dry oxidation of Si (001) beneath a thin epitaxial SrTiO3 layer has been studied using furnace annealing in flowing oxygen. A 10-nm layer of SrTiO3 is epitaxially grown on Si with no SiO2 interlayer. For such a structure, an annealing temperature of 800C was found to be the limiting temperature to prevent silicate formation and disruption of the interface structure. The effect of annealing time on thickness of the SiO2 layer was investigated. In situ x-ray photoelectron spectroscopy(XPS) and reflection-high-energy electron diffraction(RHEED) were used to ensure that the quality of SrTiO3 is unchanged after the annealing process. The experimental annealing data is compared with a theoretical oxygen diffusion model based on those due to Deal, Grove and Massoud. The model fits the experimental data well, indicating that oxygen diffusion through the SrTiO3 layer is not the limiting factor. One can therefore readily control the thickness of the SiO2 interlayer by simply controlling the annealing time in flowing oxygen.
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Presenters
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Wei Guo
University of Texas at Austin
Authors
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Wei Guo
University of Texas at Austin
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Agham Posadas
Department of Physics, University of Texas at Austin, University of Texas at Austin, Physics, University of Texas at Austin
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Alexander Demkov
University of Texas at Austin, Department of Physics, University of Texas at Austin, Physics, University of Texas at Austin