Photoluminescence quantum efficiency of nanowire quantum dots on silicon substrates

Nanowire quantum dots grown on silicon substrates provide promising technologies for integrating advanced photonic technologies on a silicon microelectronics. In this research our GaAsP nanowires contain GaAs quantum dot in the middle of the nanowires. We report the photoluminescence quantum efficiency as well as the thermal quenching mechanism of nanowire quantum dots prepared by vapor−liquid−solid method. We have performed high resolution spectroscopy, quantum yield, power dependence, and temperature dependence measurements of photoluminescence intensity from nanowire quantum dots. The data provide a picture of the quantum efficiency, thermal quenching processes and activation energy levels of nanowire quantum dots. The results provide an important step in the realization of nanowire quantum dots for photonic devices on silicon platform.