Enhanced Zeeman splitting in MoS₂monolayers doped with transition metals.

We developed an approach to dope MoS₂ monolayers with controllable concentration of transition metal ions. In this approach, a single phase transition metal-doped MoO₃ compound precursor was utilized to deposit ultrathin doped MoO₃ film by electron beam evaporation, followed by sulfurization of the precursor oxide layer to achieve monolayer transition metal doped MoS₂.
We have used magneto-reflectance spectroscopy to compare the Zeeman splitting of MoS₂ monolayers with that of MoS₂ doped with transition metals. At T = 7K we find that the A-exciton Zeeman splitting in the doped sample is 23% higher that of the undoped MoS_2. The enhancement is attributed to exchange interaction between the spins of carriers and those of the transition metal ions.