THz emission peak at low voltage bias from stacked intrinsic Josephson junction Bi<sub>2</sub>Sr<sub>2</sub>CaCu<sub>2</sub>O<sub>8</sub> terahertz sources
ORAL
Abstract
THz emission from these devices has previously been typically observed at frequencies between around 0.4 THz – 2 THz, corresponding to Josephson voltages of between 0.8 mV and 4 mV per intrinsic junction. However, we have recently observed a new type of emission which occurs at bias currents below the retrapping current of the stacked Josephson junctions. This unusual THz emission state is highly reproducible, is metastable over a timescale of hours, and shows systematic temperature dependence. The maximum emitted THz power that can be generated from this mode is comparable to that generated by the more well-established and better-understood THz emission modes in Bi2Sr2CaCu2O8 mesa sources.
We will discuss possible mechanisms for the unusual emission mode, together with future directions of related research.
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Presenters
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Karen J Kihlstrom
Physics, Queens College CUNY
Authors
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Karen J Kihlstrom
Physics, Queens College CUNY
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Timothy Benseman
Physics, Queens College CUNY
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Alexei Koshelev
Argonne Natl Lab, Materials Science Division, Argonne National Laboratory, Materials Science Division, Argonne Natl Lab, Argonne National Lab
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Ulrich Welp
Argonne National Laboratory, Argonne Natl Lab, Materials Science Division, Argonne National Laboratory, Materials Science Division, Argonne Natl Lab, Argonne National Lab
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Wai-Kwong Kwok
Argonne National Laboratory, Material Sciences, Argonne National Laboratory, Argonne Natl Lab, Materials Science Division, Argonne National Laboratory, Materials Science Division, Argonne Natl Lab, Argonne National Lab
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Kazuo Kadowaki
Institute for Materials Science, University of Tsukuba, University of Tsukuba