Reliable Growth of TaN Superconducting Film with Atomic Layer Deposition for Quantum Circuit Applications

Atomic layer deposition (ALD) is a well-known method to grow a thin film which can ensure the uniformity and conformality of the grown film. In this work, several different thicknesses of TaN thin films are grown on SiO₂/Si or Si substrates with plasma enhanced ALD process using the Tris(diethylamido)(tert-butylimido)tantalum(TBTDET) precursor reacted with H₂ gas. The grown TaN films show superconductivity reproducibly and their transition temperatures vary in the range of 3-5 K depending on the film thickness. The superconducting transition temperature and microwave transmission properties of TaN films will be analyzed in terms of their correlation with DC transport parameters including carrier type, carrier density, and carrier mobility obtained from Hall effect measurements.