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Electrical and optical control of single spins in a silicon carbide semiconductor device

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Abstract

Defect spin qubits in silicon carbide (SiC) combine near-telecom operation and long coherence with a host crystal amenable to wafer scale semiconductor device engineering[1]. In particular, the neutral divacancy (VV0) in SiC has a spin-photon interface ideal for long distance quantum communications and repeater schemes[2]. Here, we isolate for the first time single VV0 defects in functioning, doped semiconductor p-i-n diodes and use the device to control the charge states of these defects[3]. This integration of the single spin into the semiconductor junction not only allows for a drastic reduction in spectral diffusion of the emitter, but also a careful study of the defect’s charge state under illumination. We focus on these photodynamics and demonstrate deterministic and optimized charge control of the defect, allowing for charge state stabilization and electrical gating of single photon emission. We discuss the outlook for electrical control, manipulation and readout of both the spin and charge degrees of freedom in these quantum emitters.

References:
[1] D. J. Christle et al., Nature Mat. 14, 160–163 (2015)
[2] D. J. Christle et al., PRX 7, 021046 (2017)
[3] C. P. Anderson* and A. Bourassa* et al., Science (2019) [arXiv:1906.08328]

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Presenters

  • Christopher Anderson

    Pritzker School of Molecular Engineering, University of Chicago, Department of Physics, University of Chicago, University of Chicago

Authors

  • Christopher Anderson

    Pritzker School of Molecular Engineering, University of Chicago, Department of Physics, University of Chicago, University of Chicago

  • Alexandre Bourassa

    University of Chicago, Pritzker School of Molecular Engineering, University of Chicago

  • Kevin Miao

    Pritzker School of Molecular Engineering, University of Chicago, University of Chicago

  • Gary Wolfowicz

    Argonne National Lab, Pritzker School of Molecular Engineering, University of Chicago, Center for Molecular Engineering and Materials Science Division, Argonne National Laboratory, Center for Molecular Engineering, Materials Science Division, Argonne National Laboratory, Argonne National Laboratory

  • Peter J Mintun

    University of Chicago

  • Alexander Crook

    Pritzker School of Molecular Engineering, University of Chicago, Department of Physics, University of Chicago, University of Chicago

  • Hiroshi Abe

    National Institutes for Quantum and Radiological Science and Technology, National Institutes for Quantum and Radiological Science and Technology (QST)

  • Jawad Ul-Hassan

    Linköping University

  • Nguyen T Son

    Linköping University

  • Takeshi Ohshima

    Natl Inst for Quantum & Radiological Science & Tech (QST), National Institutes for Quantum and Radiological Science and Technology, National Institutes for Quantum and Radiological Science and Technology (QST)

  • David Awschalom

    Pritzker School of Molecular Engineering, University of Chicago, University of Chicago