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Electrically Tunable Anomalous Hall Effect in Topological Crystalline Insulator Films

ORAL

Abstract

Introducing ferromagnetism into topological crystalline insulator SnTe could lead to the high-Chern-number quantum anomalous Hall effect. Here we report the observation of magnetic proximity effect in heterostructures formed by the SnTe (111) and 2 quintuple layers thick Cr-doped (BiSb)2Te3 (CBST). Owing to the charge transfer between CBST and SnTe, the Fermi level of the latter can be tuned by adjusting the Bi/Sb ratio in the former. An anomalous Hall resistance as large as 0.08 h/e2 is revealed. The transferred charges modify the electric field perpendicular to the film and change the critical thickness of topological phase transition in SnTe. Such property makes SnTe useful in realizing the topological transistor.

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Presenters

  • Peng Deng

    Electrical and Computer Engineering, University of California, Los Angeles

Authors

  • Peng Deng

    Electrical and Computer Engineering, University of California, Los Angeles

  • Peng Zhang

    UCLA, Electrical and Computer Engineering, University of California, Los Angeles, Department of Electrical Engineering, University of California Los Angeles

  • Xiaoyu Che

    Electrical and Computer Engineering, University of California, Los Angeles, Department of Electrical Engineering, University of California Los Angeles

  • Kang-Lung Wang

    University of California, Los angeles, Department of Electrical Engineering, University of California, Los Angeles, University of California, Los Angeles, Electrical and Computer Engineering, University of California, Los Angeles