Development of new phase in ruthenium oxides using molecular beam epitaxy method
ORAL
Abstract
The ruthenium oxides are known to have the layered structure and the anisotropic superconductivity. Especially, Ca2RuO4 shows remarkable property change applied by electrical field or pressure. We focus on Ca2RuO4 and its related compounds to research new phase in order to develop noble physical properties.
We prepare the samples using a molecular beam epitaxy system. The substrates are LaAlO3, SrTiO3, CaF2, and YSZ. The growth temperature is 500-800 °C. We used O2, O*, O3 as the oxide source. We measured the X-ray diffraction, energy dispersive X-ray spectroscopy, temperature dependence of electrical resistivity.
We have succeeded in fabrication of Ca2RuO4 films. The temperature dependence of electrical resistivity depends on ρ ~ exp(1/T1/2) which is consistent with the report by bulk samples. At the day, We will report the challenge to fabricate the Ca2RuO4 films which show metallic or superconductivity. We also fabricated CaRuO3 and CaRu(O,F)3 films. It is confirmed that the magnetic transition temperature is suppressed in the higher F-doped range.
We prepare the samples using a molecular beam epitaxy system. The substrates are LaAlO3, SrTiO3, CaF2, and YSZ. The growth temperature is 500-800 °C. We used O2, O*, O3 as the oxide source. We measured the X-ray diffraction, energy dispersive X-ray spectroscopy, temperature dependence of electrical resistivity.
We have succeeded in fabrication of Ca2RuO4 films. The temperature dependence of electrical resistivity depends on ρ ~ exp(1/T1/2) which is consistent with the report by bulk samples. At the day, We will report the challenge to fabricate the Ca2RuO4 films which show metallic or superconductivity. We also fabricated CaRuO3 and CaRu(O,F)3 films. It is confirmed that the magnetic transition temperature is suppressed in the higher F-doped range.
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Presenters
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Masahito Sakoda
Hokkaido University
Authors
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Masahito Sakoda
Hokkaido University
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Mizuki Higashiizumi
Hokkaido University
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Satoshi Tanda
Applied Physics, Hokkaido University, Hokkaido University