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Relaxation Effects in the Electronic Structure of Twisted Bilayer Graphene: a Multi-Scale Approach

ORAL

Abstract

We introduce a multi-scale approach to obtain accurate atomic and electronic structures for atomically relaxed twisted bilayer graphene. High-level exact exchange and random phase approximation (EXX+RPA) correlation data provides the foundation to parametrize systematically improved force fields for molecular dynamics simulations that allow relaxing twisted layered graphene systems containing millions of atoms making possible a fine sweeping of twist angles. These relaxed atomic positions are used as input for tight-binding band-structure calculations where the distance & angle-dependent interlayer hopping terms are extracted from ab-initio calculations & subsequent representation with Wannier orbitals. We benchmark our results against published force fields and widely used tight-binding models and discuss their impact in the spectrum around the flat band energies. We find that our relaxation scheme yields a magic angle of twisted bilayer graphene consistent with experiments between 1.0o∼1.1o using Fermi velocities υF≈1.0∼1.1×106 m/s. We present high-resolution spectral function calculations to compare with experimental ARPES.

Presenters

  • Srivani Javvaji

    Physics, University of Seoul

Authors

  • Nicolas Leconte

    Department of Physics, University of Seoul, Physics, University of Seoul

  • Srivani Javvaji

    Physics, University of Seoul

  • Jiaqi An

    Physics, University of Seoul

  • Jeil Jung

    Physics, University of Seoul