Chemical Vapor Deposition Growth of Nickel Sulfide for optoelectronic device applications

Nickel Sulfide (Ni<span style="font-size:10.8333px">S₂)</span>, a Transition Metal Di-chalcogenide (TMDC) has become an interesting material for the scientific community owing to its intrinsically small bandgap within the mid-infrared range [1] and superior charge transport properties. Experimentally, it is challenging to characterize the quality of NiS_2. Although it offers a great opportunity for nanoelectronic devices. However, very few efforts have been given for the growth of NiS₂ thin film for device applications. To date, NiS₂ has been grown by the solution process and hydrothermal method and used for energy storage device applications. Here, we grow the NiS₂ thin film on SiO₂/Si substrate by the chemical vapor deposition (CVD) technique. Several spectroscopic studies reveal the high-quality crystalline nature of CVD grown NiS₂ film. We also fabricated the field-effect device at the nickel sulfide platform with thickness up to few nanometers (~23 nm). The performance of the fabricated device is characterized at room temperature. Nickel Sulfide field-effect device shows the drain current up ~10^-6 A with drain voltage from -2 to +2 V.
References

Mingsheng Long et.al. Adv. Funct. Mater. 2018,