Nano-Optical Imaging of CVD Grown Lateral Heterostructures

Transition Metal Dichalcogenides (TMDs) have attracted a lot of attention due to their properties such as direct band gap, photoluminescence, and applications in electronics. Several combinations of TMD monolayer heterostructures have been fabricated and studied for their unique optical and electrical properties. Here we explore CVD grown WSe₂-MoSe₂ heterostructures with the presence of telluride in order to observe the effects that arise from the integration of this material in CVD growth. We characterize the resulting material using techniques such as Kelvin Probe Force Microscopy (KPFM), Atomic Force Microscopy (AFM), and Tip Enhanced Photoluminescence (TEPL), revealing the optical properties and surface topographies of the 2D heterostructures after exposure to telluride during growth. We observe alloying and quenching of the near field PL in the 2D lateral heterostructures and propose reasons for these effects after the incorporated material. The integration of telluride to 2D materials can provide potential applications in optoelectronic devices.