Ideal Diode Behavior at the Graphene - WSe₂ Schottky Junction

The metal-semiconductor interface is a core component of many nanoelectronic devices. The Schottky junction that can form at these interfaces is key to our understanding of device behavior. We have demonstrated that in graphene-silicon junctions, the current-voltage behavior based on bulk analysis no longer applies, and the diode is best characterized by the Landauer quantum transport formalism. We extend this analysis from silicon to transition metal dichalcogenides, a class of 2D semiconductors. We construct Van der Waals heterostructures of graphene and tungsten diselenide encapsulated in hexagonal Boron Nitride, and vary the geometry to analyze the physics of this new Schottky junction.