Thermoelectric properties of As-based 1111-Zintl compounds La<sub>1-x</sub>Sr<sub>x</sub>(Zn,Cd)AsO
POSTER
Abstract
1111-system with the ZrCuSiAs-type structure has attracted great attention not only as the high-Tc superconductors but the high-performance thermoelectric compounds. The highest ZT in 1111-system was found in BiCuSeO with the value of ZT to be 1.4 at 923 K [1], demonstrating the high potential of the 1111-system as thermoelectric compounds. Previously, we found that LaFeAsO1-y exhibits large power factor with values of PF = 4.1 mW/mK2 at T = 75 K [2], demonstrating that As-based 1111-system can also be a candidate.
In this study, we focused on LaZnAsO and LaCdAsO (space group: P4 / nmm) compounds. Hole carriers were induced by Sr doping. Polycrystalline samples were synthesized by the solid reaction method. High dense samples were obtained by hot-press. As results, peak of the power factor of LaZnAsO was shift to high temperature comparing with LaFeAsO1-y, achieving the value of 0.118 mW/mK2 at T=747 K. Details of sample preparation as well as thermoelectric properties will be discussed in the conference.
[1] Li-Dong Zhao, et al, Energy Environ. Sci. 7, 2900 (2014).
[2] K. Kihou, C. H. Lee, M. Miyazawa, P. M. Shirage, A. Iyo and H. Eisaki, J. Appl. Phys. 108, 033703 (2010).
In this study, we focused on LaZnAsO and LaCdAsO (space group: P4 / nmm) compounds. Hole carriers were induced by Sr doping. Polycrystalline samples were synthesized by the solid reaction method. High dense samples were obtained by hot-press. As results, peak of the power factor of LaZnAsO was shift to high temperature comparing with LaFeAsO1-y, achieving the value of 0.118 mW/mK2 at T=747 K. Details of sample preparation as well as thermoelectric properties will be discussed in the conference.
[1] Li-Dong Zhao, et al, Energy Environ. Sci. 7, 2900 (2014).
[2] K. Kihou, C. H. Lee, M. Miyazawa, P. M. Shirage, A. Iyo and H. Eisaki, J. Appl. Phys. 108, 033703 (2010).
Presenters
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Yusuke Kimura
National Institute of Advanced Industrial Science and Technology, Tokyo University of Science
Authors
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Yusuke Kimura
National Institute of Advanced Industrial Science and Technology, Tokyo University of Science
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Kunihiro Kihou
National Institute of Advanced Industrial Science and Technology
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Hirotaka Nishiate
National Institute of Advanced Industrial Science and Technology
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Hidetomo Usui
Shimane University
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Yuto Tokunaga
Osaka University
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Tsutomu Iida
Tokyo University of Science
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Kazuhiko Kuroki
Department of Physics, Graduate School of Science, Osaka University, Department of Physics, Osaka University, Osaka Univ, Osaka University
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Chul-Ho Lee
National Institute of Advanced Industrial Science and Technology, Tokyo University of Science