Raman Enhancement effect using hexagonal Boron Nitride with a substrate

The Raman enhancement effect is a phenomenon for fundamental studies of both light-matter and matter-matter interactions and applications. Among the several Raman enhancement techniques, the surface-enhanced Raman scattering (SERS) has been the most studied. There are two different mechanisms for SERS effect, the first one is the electromagnetic mechanism when is the local electromagnetic fields around the metallic structures can be amplified. The second is the chemical mechanism which is lower understood, and its magnitude is smaller than the electromagnetic effect. The substrate surface is very important to control the necessary enhancement to make the technique as valuable as it has become. In this work, we study hexagonal boron nitride (hBN) a two-dimensional layered material with a substrate for a type of SERS, an insulator whose gap is approximately 5eV.