Structural Distortions and the Metal Insulator Transition in (111) LaNiO<sub>3</sub> Ultrathin Films
ORAL
Abstract
LaNiO3 (LNO) is unique among rare-earth nickelates in that it doesn’t exhibit a temperature dependent metal-insulator transition (MIT) in bulk. A thickness dependent MIT can be seen in (001)-oriented LNO films at ~8 Å thick and has been ascribed to ligand-holes, oxygen vacancies and charge disproportionation. We observe a similar MIT in (111)-oriented LNO on LaAlO3 in transport measurements, but at a greater critical thickness than in (001) LNO on LAO. Synchrotron x-ray diffraction data and dynamical analysis show an elongation of the out-of-plane lattice parameter to 2.4 Å near the (111) interface. As the film gets thicker, the lattice constant shrinks to 2.25 Å and the film exhibits bulk metallic behavior. This distortion in the [111] direction in the first 8 unit cells is distinct from strain accommodation in (001) films, where oxygen octahedra can more easily rotate to relieve strain. We correlate the insulating behavior to this distortion and an increase in Ni2+, measured via x-ray absorption spectroscopy. Together these results imply that metallicity in LNO films is a balance among the charge, lattice and orbital degrees of freedom.
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Presenters
Margaret Kane
Stanford Univ
Authors
Margaret Kane
Stanford Univ
Lauren Riddiford
Stanford University, Stanford Univ, Applied Physics, Stanford University
Arturas Vailionis
Stanford Univ
Apurva Mehta
SLAC National Accelerator Laboratory, Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, SLAC Natl Accel Lab
Alpha T. N'Diaye
Lawrence Berkeley National Laboratory, Lawrence Berkeley National Lab, Advanced Light Source, Lawrence Berkeley National Laboratory, Adv Light Source LBL
Elke Arenholz
Lawrence Berkeley National Lab, Advanced Light Source, LBNL, Adv Light Source LBL
Yuri Suzuki
Stanford University, Stanford Univ, Dept. of Applied Physics, Stanford University, Geballe Laboratory for Advanced Materials, Stanford University, Applied Physics, Stanford University