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A non-linear Hall effect at zero field in a chiral nonmagnetic compound

ORAL

Abstract

The Hall effect arising from the Berry curvature is one of the most important topological phenomena. In the linear response regime, such a Hall effect appears only in the time-reversal symmetry breaking condition; this is well-known as an anomalous Hall effect. By contrast, the recent studies have proposed that in the nonlinear response regime, a Hall voltage can be observed due to the Berry curvature even in time-reversal invariant systems. These works demonstrate that the new-type of Hall effect is a powerful probe for investigating Berry physics in the nonmagnetic topological materials. However, experimental studies on this nonlinear Hall effect are still lacking.
Here, we report the observation of nonlinear Hall effect in a chiral nonmagnetic compound. We find that an electric current induces a nonlinear Hall voltage under time-reversal invariant conditions. The sign of the voltage at 4.2 K depends strongly on the direction of the chirality of crystal structure, which is consistent with the theoretical calculations. Furthermore, this nonlinear Hall effect becomes smaller at higher temperatures but is still observable even at room temperature.

Presenters

  • Kohei Matsuura

    Univ of Tokyo, Department of Advanced Materials Science, University of Tokyo, Department of Advanced Materials Science, The University of Tokyo, Univ of Tokyo-Kashiwanoha

Authors

  • Kohei Matsuura

    Univ of Tokyo, Department of Advanced Materials Science, University of Tokyo, Department of Advanced Materials Science, The University of Tokyo, Univ of Tokyo-Kashiwanoha

  • Mingwei Qiu

    Univ of Tokyo, Department of Advanced Materials Science, University of Tokyo, Department of Advanced Materials Science, The University of Tokyo

  • Yuta Mizukami

    Department of Advanced Materials Science, The University of Tokyo, Univ of Tokyo-Kashiwanoha

  • Kenichiro Hashimoto

    Department of Advanced Materials Science, University of Tokyo, Department of Advanced Materials Science, The University of Tokyo, Department of Advanced Material Science, University of Tokyo

  • Takasada Shibauchi

    Advanced Materials Science, University of Tokyo, Univ of Tokyo-Kashiwanoha, Department of Advanced Materials Science, University of Tokyo, Univ of Tokyo, Dept. Adv. Mat. Sci., Univ. Tokyo, Univ. of Tokyo, Department of Advanced Materials Science, The University of Tokyo, Department of Advanced Material Science, University of Tokyo

  • Teppei Ueno

    Okayama University, Department of Physics, Okayama University

  • Takeshi Takahashi

    Okayama Univ, Department of Physics, Okayama University

  • Kaya Kobayashi

    Okayama Univ, Okayama University, Research Institute for Interdisciplinary Science, Okayama University

  • Masatoshi Akazawa

    Institute for Solid State Physics, The University of Tokyo, ISSP, Univ. of Tokyo

  • Sakurako Fujii

    Institute for Solid State Physics, The University of Tokyo

  • Jun Gouchi

    Institute for Solid State Physics, University of Tokyo, Institute for Solid State Physics, The University of Tokyo

  • Minoru Yamashita

    Institute for Solid State Physics, University of Tokyo, Institute for Solid State Physics, The University of Tokyo, ISSP, Univ. of Tokyo

  • Yoshiya Uwatoko

    Institute for Solid State Physics, University of Tokyo, Institute for Solid State Physics, The University of Tokyo, Institute for Solid State Physics, Univ of Tokyo

  • Masaaki Shimozawa

    Department of Materials Engineering Science, Osaka University