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Anomalous Hall effect in epitaxial WTe<sub>2</sub>/VTe<sub>2</sub> heterostructures

ORAL

Abstract

The Td (orthorhombic) phase of WTe2, a transition metal dichalcogenide (TMD), is a type-II Weyl semimetal (WSM) when a few monolayer thick. Topological semimetals with broken time-reversal symmetry have recently garnered attention due to the ability to manipulate Weyl nodes, causing interesting electro-magnetic responses. Realizing a magnetic WSM in the thin film form, however, is challenging. In this talk, we present our studies on the magnetic properties of WTe2/VTe2 thin film heterostructures. Using molecular beam epitaxy, we grow WTe2 in its Td phase confirmed by in situ reflection high energy electron diffraction. Ultra-smooth film showing atomic terraces and Raman spectroscopy confirm film quality. We perform systematic transport measurements on WTe2/VTe2 heterostructures with vanadium doping to form (W1-xVx)Te2, varying x from 0% to 20%. V-doping also changes the Fermi level in WTe2 and induces a carrier type change. An anomalous Hall effect (AHE) signal is observed, whose magnitude varies with the doping level, reaching a minimum near the charge compensation point. The sign of AHE does not change with carrier type. The origin of the AHE will be discussed.

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Presenters

  • Jason Tran

    Department of Physics and Astronomy, University of California, Riverside

Authors

  • Jason Tran

    Department of Physics and Astronomy, University of California, Riverside

  • Junxue Li

    University of California, Riverside, Department of Physics and Astronomy, University of California, Riverside

  • Jing Shi

    University of California, Riverside, Physics and Astronomy, University of California, Riverside, Department of Physics and Astronomy, University of California, Riverside

  • Peng Wei

    University of California, Riverside, University of California Riverside, Department of Physics and Astronomy, University of California, Riverside