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Growth of the Transparent Correlated Metal SrVO<sub>3</sub>

ORAL

Abstract

<div style="direction: ltr;">The ongoing search for earth-abundant transparent conduction oxides (TCOs) has spread across a wide variety of research fields, highlighting the correlated metal SrVO3 as a potential candidate. SrVO3 displays high conductivity and transparency in the visible. Moreover, SrVO3 is an attractive candidate for future electronics. A major hurdle for the synthesis of high quality SrVO3 is to mitigate the formation of defects throughout the thin film. These defects can cause electron scattering and result in high resistivity and obscure some of the interesting physics. Film growth was done with molecular beam epitaxy (MBE), providing a scalable and industry-compatible fabrication process. In this work we present low defect SrVO3 films with residual resistivity ratios exceeding 10 and room temperature resistivities in the order of 30 µΩ cm. Careful analysis of the structural and electronic properties of the SrVO3 films paves the way towards further improvement of their quality and their implementation as TCO in optoelectronics and renewable energy devices.
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Presenters

  • Lishai Shoham

    Andrew and Erna Viterbi Department of Electrical Engineering, Technion—Israel Institute of Technology

Authors

  • Lishai Shoham

    Andrew and Erna Viterbi Department of Electrical Engineering, Technion—Israel Institute of Technology

  • Maria Baskin

    Andrew and Erna Viterbi Department of Electrical Engineering, Technion—Israel Institute of Technology

  • Myung-Geun Han

    Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Brookhaven National Laboratory

  • Yimei Zhu

    Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Brookhaven National Laboratory, Brookhaven National Lab, Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Department of Energy Science and Technology, Brookhaven National Laboratory

  • Lior Kornblum

    Andrew and Erna Viterbi Department of Electrical Engineering, Technion—Israel Institute of Technology