Electrostatic gate-controlled fermi level dependent electronic band structure of graphene

The observation of electronic band structure in 2D material devices as they operate opens limitless opportunities to explore fundamental physics. The most robust technique to probe electronic structure is through angle-resolved photoemission spectroscopy (ARPES) and can now be used to investigate mesoscopic sized 2D materials and their heterostructures. Only being sensitive to filled states, ARPES measurements are restricted to states below the Fermi energy of the sample. Historically, chemical doping has been the preferred technique to manipulate the Fermi energy, but is difficult to control, introduces electronic states that are not intrinsic to the sample of interest, and can only be reversed through high-temperature annealing. Electrostatic doping, having none of these drawbacks, allows us to reversibly investigate the electron energy and momentum states of graphene far above the Dirac point. We will present our results on the electrostatic gate controlled electronic band structure of graphene using nanoARPES.