Gate-tunable superconductivity in layered β-MoTe₂

van der Waals heterostructures of mechanically-exfoliated crystalline materials are a platform to observe quantum phenomena in the low-disorder limit. Of special interest are materials with low carrier density, where the use of electrostatic doping and electric field tuning of bandstructure gives us easily accessible experimental tuning knobs. Twisted graphene and TMD superlattices, and monolayer WTe₂ are a couple of striking recent examples. In monolayer WTe₂, the use of gate potentials has been shown to tune between a topological insulator and a superconducting phase. In this talk, we describe transport measurements on a closely related material, β-MoTe₂. We show that β-MoTe₂ exhibits robust gate-tunable superconductivity in the few-layer limit. hBN encapsulated devices in the monolayer exhibit a superconducting critical temperature of ~ 6 K, a nearly hundred-fold enhancement over the bulk value. Using a dual-gated device structure, we also observe a strong dependence of superconducting properties on carrier density and displacement field. In this talk, we will fully characterize the layer, carrier density, displacement field, and magnetic field phase diagrams of this material.