Ordering and Defectivity in Sub-10 nm Perpendicular Lamellar Block Copolymer Thin Films

The self-assembled nanostructures of block copolymers (BCP) can be used to meet industrial demand for cost-effective methods for forming sub-10 nm lithographic patterns. By applying perpendicular lamellar BCP structures onto thin films, line and space patterns required for lithography can be obtained. However, there remain challenges that must be resolved prior to high-volume manufacturing; the development of strongly-segregating BCPs capable of forming sub-10 nm features, controlling the microdomain orientation into perpendicular structures, and reducing the nanostructure defectivity. Our lab has developed a strongly-segregating BCP, poly(methacrylyl polyhedral oligomeric silsesquioxane)-block-poly(2,2,2-trifluoroethyl methacrylate) (PMAPOSS-b-PTFEMA), that forms sub-10 nm perpendicular lamellae on thin films with ease. To work towards achieving zero defectivity, we studied the growth of ordered structures in PMAPOSS-b-PTFEMA thin films using combinatorial atomic force microscopy (AFM), grazing-incidence small angle X-ray scattering (GI-SAXS), and cross-sectional scanning electron microscopy (CS-SEM).