Characteristics of β-Ga₂O₃ 2D-nanoleaf and 1D-nanowire structures and their resistive switching performance

Resistive memory is one of the promising next generation nonvolatile memories with advantages over other emerging nonvolatile memories like DRAM, PCRAM, CBRAM etc. Dielectric thin films as the resistive switching material have been studied extensively through the scientific community. In this study, we have taken advantage of controlled electron flow in 2D and 1D materials to study the resistive switching. High-density single crystalline β-Ga₂O₃ 2D-nanoleafs and 1D nanowires on Si (100) substrate are grown by vapor-liquid-solid growth technique. The structural features are explored by SEM, TEM and XRD analysis. The elemental compositions and binding characteristics are confirmed by the EDS spectrum from FESEM and TEM analysis and XPS respectively. The photoelectrical property is studied by Raman spectroscopy and absorption spectroscopy. Here we have compared the resistive switching performance of a single 2D β-Ga₂O₃ nanoleaf and 1D β-Ga₂O₃ nanowire ReRAM devices. The switching mechanism of both 1D and 2D nanostructures are governed by the oxygen migration between two electrodes by the formation and rupture of conducting filaments.
Keywords: Resistive memory, β-Ga₂O₃, nanoleaf, nanowire, VLS growth