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In<sub>4</sub>Se<sub>3 </sub>(001) surface termination and Schottky-barrier formation

ORAL

Abstract

In4Se3 (001) is a novel n-type semiconductor with great potential for 2D material phototransistors and beyond CMOS electronics. X-ray photoemission spectroscopy (XPS) measurements indicate that In4Se3 (001) system terminates in In (and not Se). These results disagree with density functional theory, which indicates that the Se termination of In4Se3 (001) is more stable. The interface between In4Se3 (001) and evaporated Au indicates toward the existence of Schottky barrier. This is very different from the interface between Au and TiS3 (001), which exhibits Ohmic behavior. Additionally, the shift in binding energy (due to a barrier height) shows up only in one of the In core level photoemission components that is nearest to the interface.

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Presenters

  • Archit Dhingra

    Physics and Astronomy, University of Nebraska at Lincoln, Physics and Astronomy, University of Nebraska - Lincoln

Authors

  • Archit Dhingra

    Physics and Astronomy, University of Nebraska at Lincoln, Physics and Astronomy, University of Nebraska - Lincoln

  • Pavlo V. Galiy

    Electronics, Ivan Franko L'viv National University

  • Lu Wang

    CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China

  • Taras M. Nenchuk

    Electronics, Ivan Franko L'viv National University

  • Andrew J. Yost

    Physics, Oklahoma State University, Oklahoma State University, Physics, Oklahoma State University-Stillwater

  • Wai-Ning Mei

    Physics, University of Nebraska-Omaha

  • Peter A Dowben

    University of Nebraska - Lincoln, Department of Physics and Astronomy, University of Nebraska - Lincoln, Department of Physics and Astronomy, University of Nebraska, Physics and Astronomy, University of Nebraska - Lincoln