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Fast and tunable Rabi oscillations of hole spins in Ge/Si nanowires

ORAL

Abstract

The strong confinement of holes to one dimension in Ge/Si core/shell nanowires gives rise to direct Rashba spin-orbit interaction which is predicted to be both very strong and electric field tunable. The full electrical control promises to switch the spin-orbit interaction either on, enabling fast qubit operations, or off, protecting the spin state in order to achieve an increased qubit lifetime. These properties make Ge/Si nanowires a very promising system for the implementation of hole spin qubits. Recent experiments have found a spin-orbit interaction length on the order of only 30 nm, paving the way to very fast spin manipulation by electric dipole spin resonance. This mechanism allows us to drive very fast Rabi oscillations above 400 MHz at a Larmor frequency of 3.4 GHz, thus entering the strong driving regime. Furthermore, we find the Rabi oscillation frequency as well as the g-factor to be highly tunable with small changes in gate voltages, indicating the feasibility to electrically control the spin-orbit interaction strength.

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Presenters

  • Florian Froning

    University of Basel

Authors

  • Florian Froning

    University of Basel

  • Leon Camenzind

    Department of Physics, University of Basel, University of Basel

  • Ang Li

    TU Eindhoven, Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology

  • Erik Bakkers

    Dept. of Physics, Technical University, Eindhoven, The Netherlands, Eindhoven University of Technology, Department of Applied Physics, Eindhoven University of Technology, Applied Physics, Eindhoven Univ. of Technology, TU Eindhoven, Applied Physics, Eindhoven University of Technology

  • Dominik Zumbuhl

    University of Basel, Department of Physics, University of Basel, Department of Physics, University of Basel, CH-4056, Basel, Switzerland

  • Floris Braakman

    University of Basel