Controlling textured hole spins in InAs quantum dots with oscillating electric fields

Recently, we have shown that hole spins in InAs quantum dots (QDs) exhibit spatially dependent texture, caused by the spin-orbit properties of the material and the geometry of the dot. Utilizing this spin texture, we demonstrated the ability to flip the overall hole spin by reversing the in-plane electrical bias across the dot. To fully capture the spin texture of the hole states, we used an atomistic tight-binding model that is able to resolve the wavefunction at the atomic level. However, atomistic tight-binding calculations are computationally expensive. Here, we present a reduced Hamiltonian capable of describing the evolution of the lowest hole state tight-binding wavefunctions, simulating the effect of oscillating electric fields, while fully preserving the effects of the spin texture. We calculate the timescale at which the spatial texture of the hole spin evolves, how the spin texture changes as the field oscillates, and how oscillating fields drive the overall net spin. We briefly discuss how our results can be used to design new control schemes for holes in QDs.