Weak Electron-Electron Interaction effects in La-doped SrSnO₃ Films

Alkaline-earth stannates with perovskite structures have attracted significant research interest recently due to their wide bandgap, high optical transparency, and high room temperature mobility. These characteristics make them promising candidates for transparent electronics and power electronics applications. Significant progress has been made in the synthesis, characterization and device demonstration, but there are still many open fundamental questions regarding the electronic transport in stannates.

In this talk, we present the temperature and magnetic field dependent transport study of La-doped SrSnO₃ (SSO) films. We demonstrate that the electron-electron interaction effect is primarily responsible for an increase in the Hall coefficient in the La-doped SSO films below 50 K accompanied by an increase in the sheet resistance. Magnetoresistance fitting yielded a large electron phase coherence length exceeding 450 nm at 1.8 K and revealed the electron-electron interaction to be the electron phase-coherence breaking mechanism in La-doped SSO films. These results while providing critical insights into the fundamental transport behavior in doped stannates also indicate the potential applications in quantum coherent electronic devices owing to their large phase coherence length.