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Enhancement of spin-charge interconversion efficiency by interface engineering in all oxide La0.3Sr0.7MnO3/SrIrO3 system

ORAL

Abstract


Spin-charge interconversion in complex oxide SrIrO3 has been studied extensively. Spin Hall angle of SrIrO3 thin film has been reported, varying from 0.5[1][2] to 1[3]. Given the large resistivity mismatch between semimetal SrIrO3 thin films and typical metal ferromagnets such as CoFeB, CoFe and NiFe, spurious effects and current shunting would be unavoidable in transport measurements. The oxide ferromagnet La0.3Sr0.7MnO3 (LSMO) exhibits high Curie temperature, small coercive field and resistance comparable to SrIrO3 thin films, making it a more suitable candidate for the study of intrinsic spin Hall effects in SrIrO3 thin films. Also, in situ epitaxial growth of LSMO/SrIrO3 bilayer system by PLD provides us a platform for engineering the bilayer interface, realizing a fine control of spin dependent interface properties such as effetive spin mixing conductance (g↑↓). g↑↓ that is one orders higher than NiFe/2DES, two orders higher than YIG/Heavy metals has been measured.
[1]. A.S.Everhardt. Phys. Rev. Materials 3, 051201 (2019).
[2].T.Nan. PNAS 116 (33) 16186-16191 (2019).
[3].HL. Wang. Appl. Phys. Lett.114, 232406 (2019).

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Presenters

  • Xiaoxi Huang

    Department of Materials Science and Engineering, University of California, Berkeley, University of California, Berkeley

Authors

  • Xiaoxi Huang

    Department of Materials Science and Engineering, University of California, Berkeley, University of California, Berkeley

  • Hongrui Zhang

    University of California, Berkeley, USA, University of California, Berkeley

  • Shehrin Sayed

    Electrical Engineering and Computer Science, University of California, Berkeley, EECS, University of California, Berkeley, University of California, Berkeley

  • Shang-Lin Hsu

    University of California, Berkeley

  • Arnoud Everhardt

    University of California, Berkeley

  • Tanay Gosavi

    Intel Corp., Intel Corporation, Intel Corp

  • Chia-Ching Lin

    Intel Corp., Intel Corporation, Intel Corp

  • Sasikanth Manipatruni

    Intel Corp., Intel Corporation

  • Ian Young

    Intel Corp., Intel Corporation

  • Sayeef Salahuddin

    Electrical Engineering and Computer Science, University of California, Berkeley, EECS, University of California, Berkeley, University of California, Berkeley

  • Daniel Ralph

    Cornell University, Physics, Cornell University, Department of Physics, Cornell University, Department of Materials Science and Engineering, Cornell University

  • Ramamoorthy Ramesh

    Department of Materials Science and Engineering, UC Berkeley, University of California, Berkeley, USA, University of California, Berkeley, Materials Science and Engineering, University of California, Berkeley, Department of Materials Science and Engineering, University of California, Berkeley, Department of Materials Science and Engineering,, University of California, Berkeley, California 94720, USA