Low-temperature magnetic proximity effects in Mg(Al,Fe)<sub>2</sub>O<sub>4</sub>/Bi<sub>2</sub>Se<sub>3</sub> bilayers
ORAL
Abstract
Topological insulators (TIs) are of significant interest in spin current-based electronics due to their strong spin-orbit coupling from spin-momentum locking of surface states. Bi2Se3 is a 3D topological insulator with a semiconductor gap in the bulk and gapless surface states. However, conduction near room temperature is typically bulk-dominated due to Se vacancies. Bilayers of Mg(Al,Fe)2O4 (MAFO), a magnetic insulator, and Bi2Se3 show highly efficient spin pumping in the bulk-dominated regime at room temperature. At low temperature, below 45 K, we have found evidence of proximity-induced magnetism in the TI. To understand the underlying mechanism of this proximity-induced magnetism, we performed polarized neutron reflectometry which indicates a sharp interface and a magnetic moment in the TI up to at least 45 K. In transport measurements, we observed both the anomalous Hall effect (AHE) and a large unidirectional magnetoresistance in the TI. The AHE, around 1 Ω at 2 K, was observed up to ~40 K and was amplified by electrically gating Bi2Se3. These results suggest that the induced magnetism in Bi2Se3 is primarily due to the coupling between MAFO and the surface states of Bi2Se3.
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Presenters
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Lauren Riddiford
Stanford University, Stanford Univ, Applied Physics, Stanford University
Authors
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Lauren Riddiford
Stanford University, Stanford Univ, Applied Physics, Stanford University
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Peng Li
Auburn University, Electrical and Computer Engineering, Auburn University
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Alexander Grutter
National Institute of Standards and Technology, NIST Center for Neutron Research
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Yuri Suzuki
Stanford University, Stanford Univ, Dept. of Applied Physics, Stanford University, Geballe Laboratory for Advanced Materials, Stanford University, Applied Physics, Stanford University