Effects of pressure on the magnetic anisotropy of ferromagnetic insulator Cr$_{\mathrm{2}}$Ge$_{\mathrm{2}}$Te$_{\mathrm{6}}$

ORAL

Abstract

Cr$_{\mathrm{2}}$Ge$_{\mathrm{2}}$Te$_{\mathrm{6}}$ is an interesting atomically layered ferromagnetic insulator with space group $R\overline 3 $ that has a Curie temperature of \textasciitilde 61 K and a band gap of \textasciitilde 0.2 eV. Owing to the van der Waals nature of the crystal structure, both electronic and magnetic properties depends on the interlayer coupling; therefore, it is interesting to study the effects of the interlayer spacing on physical properties. In this study, we apply a hydrostatic pressure to a CGT crystal up to 2000 PSI while measuring its magneto-transport properties with an external magnetic field applied along the c-axis of CGT. With increasing pressure, we observe a systematic increase in the anisotropic magnetoresistance ratio accompanied by a decrease in the band gap. In the meantime, the saturation field in the magnetoresistance increases as the pressure increases, indicating that the magnetization gradually favors to be in the ab-plane. This induced anisotropy change could be attributed to the increased interlayer coupling as the layers are bought closer to each other.

Authors

  • Zhisheng Lin

    Univ of California - Riverside

  • Mark Lohmann

    Univ of California - Riverside, Department of Physics and Astronomy, UC, Riverside

  • Chi Tang

    Univ of California - Riverside

  • J. X. Li

    Univ of California - Riverside, UC, Riverside, CA

  • Wenyu Xing

    Peking University, Beijing,China

  • Jiangnan Zhong

    Peking University, Beijing,China

  • Shuang Jia

    Peking University, Beijing,China, ICQM, School of Physics, Peking University, International Center for Quantum Materials, School of Physics, Peking University, China Collaborative Innovation Center of Quantum Matter, Beijing,100, Peking University

  • Wei Han

    Peking University, Beijing,China, International Center for Quantum Materials, Peking University, Beijing 100871, China

  • Jing Shi

    Univ of California - Riverside