Bulk and surface electronic structure of hexagonal structured PtBi$_{\mathrm{2}}$ studied by angle-resolved photoemission spectroscopy

POSTER

Abstract

PtBi$_{\mathrm{2}}$ with a layered hexagonal crystal structure was recently reported to exhibit an unconventional large linear magnetoresistance. Using angle-resolved photoemission spectroscopy, we present a systematic study on its bulk and surface electronic structure. Through comparison with first-principle calculations, our experiment distinguishes the low-lying bulk bands from entangled surface states. We find significant electron doping in PtBi$_{\mathrm{2}}$, implying a substantial Bi deficiency induced disorder therein. Intriguingly, we discover a Dirac-cone-like surface state without topological protection on the boundary of the Brillouin zone. Our findings exclude linear band dispersion in the quantum limit as the cause of the unconventional large linear magnetoresistance but put support to the classical disorder model from the perspective of the electronic structure.

Authors

  • Qi Yao

    Fudan Univ

  • Yongping Du

    Nanjing University

  • Xiaojun Yang

    Zhejiang University

  • Yi Zheng

    Zhejiang University

  • Difei Xu

    Fudan Univ

  • Xiaohai Niu

    Fudan Univ

  • Xiaoping Shen

    Fudan Univ

  • Haifeng Yang

    Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences

  • Pavel Dudin

    Diamond Light Source, Harwell Science and Innovation Campus, United Kingdom

  • Timur Kim

    Diamond Light Source, Harwell Science and Innovation Campus, United Kingdom, Diamond Light Source, Harwell Campus, Didcot OX11 0DE, United Kingdom

  • Moritz Hoesch

    Diamond Light Source, Harwell Science and Innovation Campus, United Kingdom, Diamond Light Source, Harwell Campus, Didcot OX11 0DE, United Kingdom

  • ivana vobornik

    CNR-IOM, TASC Laboratory AREA Science Park-Basovizza, Italy

  • Zhuan Xu

    Zhejiang University

  • Xiangang Wan

    Nanjing University

  • Donglai Feng

    Fudan Univ.

  • Dawei Shen

    Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences