Electrical Excitation of Silicon Vacancies in 4H SiC

The Silicon Vacancy in 4H Silicon Carbide (SiC) can serve as a single photon source. In this presentation I will describe my work to electrically excite an ensemble of Silicon Vacancies. A 4H SiC pn junction was irradiated with electrons and then a mesa structure was fabricated to probe this junction. I will describe the effects of this irradiation on the electroluminescence spectrum of this junction under forward and reverse bias conditions, as well as after annealing the junction at 200C, 500C, and 1000C.