Phase transition in MoS$_{\mathrm{2}}$ monolayers through alloying

ORAL

Abstract

Alloying of 2D monolayers can produce materials with different properties than either component. MoS$_{\mathrm{2}}$ is known to have a stable hexagonal 1H structure, but the alternative tetragonal DT structure has been stabilized in multilayer form by Li intercalation. It is also known that the stable structure of monolayer ReS$_{\mathrm{2}}$ is DT. In this work, we use electron microscopy and density functional theory calculations to demonstrate that an H-to-T phase transition can be achieved in MoS$_{\mathrm{2}}$ by Re doping. Both the microscopy images and the calculations find that the phase transition occurs at a Re concentration of just below 50{\%}. In contrast to the phase transition by lithium intercalation which is induced by the electron doping effect, the calculations find that electron doping alone, compensated by a uniform positive background, shift the critical concentration to 75{\%}, which indicates that changes in chemical bonding facilitate the transition. At 50{\%} alloying, the energy gap of the DT material is only 0.2 eV, compared with 1.8 eV in 1H MoS$_{\mathrm{2}}$.

Authors

  • Priyanka Manchanda

    Vanderbilt Univ

  • Shize Yang

    Oak Ridge National Laboratory, USA, Oak Ridge National Laboratory

  • Yuyang Zhang

    Vanderbilt University, Vanderbilt University, USA, Vanderbilt Univ, Department of Physics and Astronomy, Vanderbilt University

  • Yongji Gong

    Rice University, USA, Rice University, Houston

  • Pulickel Ajayan

    Rice University, USA, Rice University, Houston, Rice University

  • Matthew Chisholm

    Oak Ridge National Laboratory, USA, Oak Ridge National Laboratory

  • Sokrates T. Pantelides

    Vanderbilt University, Vanderbilt University, USA, Oak Ridge National Laboratory, USA, Vanderbilt University, Oak Ridge National Lab, Vanderbilt University, USA, Vanderbilt Univ., Department of Physics and Astronomy, Vanderbilt University, Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science, Vanderbilt University

  • Wu Zhou

    University of Chinese Academy of Sciences, China, University of Chinese aca. of sci., Beijing