A universal parametric representation for weak-localization magnetoconductance in 2D and 3D systems

ORAL

Abstract

We study the magnetotransport properties of a heavily-doped Si:P 2D layer, as a step towards the fabrication of buried ordered dopant structures and wires. The magnetoconductance $\Delta\sigma$ is dominated by weak localization. A combination of linear and angular magnetic field sweeps reveals the existence of a single dimensionless parameter $p$, which governs the magnitude of $\Delta\sigma$ as a function of magnetic field magnitude and inelastic scattering length (which is temperature dependent). We compare this with weak localization in bulk Si:P and find that even though the magnetic-field dependence of $\Delta\sigma$ is logarithmic in 2D and power-law in 3D, their dependence on $p$ is unchanged, thus establishing a universal behavior that is independent of dimension.

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Authors

  • Guy Matmon

    London Centre for Nanotechnology, University College London

  • Eran Ginossar

    University of Surrey, Advanced Technology Institute, University of Surrey

  • Byron Villis

    London Centre for Nanotechnology, University College London

  • Alex Kölker

    London Centre for Nanotechnology, University College London

  • Tingbin Lim

    London Centre for Nanotechnology, University College London

  • Neil Curson

    London Centre for Nanotechnology, London Centre for Nanotechnology and UCL Department of Electronic and Electrical Engineering, University College London

  • Juerong Li

    Advanced Technology Institute, University of Surrey

  • Ben Murdin

    Advanced Technology Institute, University of Surrey

  • Andrew Fisher

    University College London, London Centre for Nanotechnology and UCL Department of Physics & Astronomy, University College London

  • Gabriel Aeppli

    Paul Scherrer Institute and Department of Physics, ETH Zurich