Lasing in Er doped GaN multiple-quantum well structures

Erbium doped GaN have attracted much attention due to their capability to provide highly thermal stable optical emission in technologically important wavelengths. There is a continued need to exploring effective mechanisms to further improve the quantum efficiency of the 1.54 $\mu $m emission in this material. We report photoluminescence and direct evidence of two mechanisms responsible for the excitation of Er3$+$ ions in GaN/AlN multiple quantum wells (MQWs:Er) grown by metal organic chemical vapor deposition. The emission intensity from our MQWs:Er increases significantly, compared with those from a single layer. We will discuss the influence of the quantum well and barrier width on the photoluminescence emission at 1.54 $\mu $m. These results demonstrate the lasing in MQWs:Er multiple-quantum well structures at 1.54 $\mu $m.