A MoTe2 based light emitting diode and photodetector for silicon photonic integrated circuits.

A key challenge in photonics today is to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, partly because many components such as waveguides, interferometers and modulators, could be integrated on silicon-based processors. However, light sources and photodetectors present continued challenges. Common approaches for light source include off-chip or wafer-bonded lasers based on III-V materials, but studies show advantages for directly modulated light sources. The most advanced photodetectors in silicon photonics are based on germanium growth which increases system cost.~The emerging two dimensional transition metal dichalcogenides (TMDs) offer a path for optical interconnects components that can be integrated with the CMOS processing by back-end-of-the-line processing steps. Here we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe$_{\mathrm{2}}$, a TMD semiconductor with infrared band gap. The state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.