Landau level gaps in high mobility black phosphorus devices

ORAL

Abstract

Black phosphorus (BP) has recently attracted wide interest as a high mobility two-dimensional semiconductor. Here we report encapsulated few-layer BP field effect transistors achieving high field effect mobility at cryogenic temperatures and observation of the integer quantum Hall effect in high magnetic field. We examine the devices' anisotropic transport properties and the Landau level gaps by varying temperature and magnetic field. Latest results will be discussed and compared with theoretical models.

–

Authors

  • Son Tran

    Univ of California - Riverside, University of California, Riverside

  • Jiawei Yang

    Univ of California - Riverside, University of California, Riverside

  • Jason Wu

    Univ of California - Riverside

  • Hongwoo Baek

    National High Magnetic Field Lab

  • Dmitry Smirnov

    National High Magnetic FIeld Laboratory, National High Magnetic Field Lab

  • Takashi Taniguchi

    Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan, National Institute for Materials Science

  • Kenji Watanabe

    Japanese National Institute of Materials Science, Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan, National Institute for Materials Science

  • Ruoyu Chen

    Univ of California - Riverside

  • Chun Ning Lau

    Univ of California - Riverside