P-type field effect transistor based on Na-doped BaSnO$_{\mathrm{3}}$

We fabricated field effect transistors (FET) based on the p-type Na-doped BaSnO$_{\mathrm{3}}$ (BNSO) channel layer. The properties of epitaxial BNSO channel layer were controlled by the doping rate. In order to modulate the p-type FET, we used amorphous HfO$_{\mathrm{x}}$ and epitaxial BaHfO$_{\mathrm{3}}$ (BHO) gate oxides, both of which have high dielectric constants. HfO$_{\mathrm{x}}$ was deposited by atomic-layer-deposition and BHO was epitaxially grown by pulsed laser deposition. The pulsed laser deposited SrRuO$_{\mathrm{3}}$ (SRO) was used as the source and the drain contacts. Indium-tin oxide and La-doped BaSnO$_{\mathrm{3}}$ were used as the gate electrodes on top of the HfO$_{\mathrm{x}}$ and the BHO gate oxides, respectively. We will analyze and present the performances of the BNSO field effect transistor such as the $I_{\mathrm{DS}}$-$V_{\mathrm{DS}}$, the $I_{\mathrm{DS}}$-$V_{\mathrm{GS}}$, the $I_{\mathrm{on}}$/$I_{\mathrm{off}}$ ratio, and the field effect mobility.