Scaling of SrTiO$_{\mathrm{3}}$ growth rates of using hybrid molecular beam epitaxy

Perovskites exhibit a wide range of desirable properties, including ferroelectricity, ferromagnetism, as well as transport properties ranging from superconductivity to Mott-like behavior. However, deposition is plagued by notoriously slow growth rates, as well as a high sensitivity to nonstoichiometric defects. In this work, we have been able to mitigate these barriers for SrTiO$_{\mathrm{3}}$ films grown using hybrid molecular beam epitaxy (HMBE). In HMBE, one of the cations is supplied via a volatile metalorganic precursor. This allows for the development of a stoichiometric ``growth window'', similar to those seen in GaAs and to replicate the fast deposition rates achievable in GaAs growth.$^{\mathrm{\thinspace }}$ In-situ reflection high energy electron diffraction was used to assess film stoichiometry and efficiently determine the limits of the growth window. A series of SrTiO$_{\mathrm{3}}$ films were grown on LSAT substrates at rates ranging from \textasciitilde 25 nm/h to 500 nm/h. I will present x-ray diffraction, atomic force microscopy, and electron microscopy images to show homoepitaxial SrTiO$_{\mathrm{3}}$ films are indistinguishable from the bulk substrate, even at these accelerated growth rates.