Charge transport physics of single crystal organic semiconductors

ORAL

Abstract

Determining the physics of charge transport in organic semiconductors has proven to be a difficult endeavor. The similar energy ranges of the many processes involved in charge transport, including excitonic coupling, charge-phonon coupling, and trap state distributions, result in ambiguity in the interpretation of temperature dependent electrical measurements. In addition, energetic mismatches at electrical interfaces and unique geometries of devices used for measurement often impact the final device characteristics more strongly than the intrinsic transport of the semiconductor. In order to disentangle competing physical effects on device characterization at low temperature, we use TEM and Raman spectroscopy to track changes in the structure and thermal molecular motion in single crystal tetracene, correlated with calculation. We then perform careful DC and AC electrical characterization of single crystal tetracene devices built with a variety of contacting materials in order to fully understand the origin of resulting electrical characteristics.

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Authors

  • Emily G. Bittle

    National Institute of Standards and Technology, Engineering Physics Division, National Institute of Standards and Technology

  • Adam J. Biacchi

    National Institute of Standards and Technology (NIST), Engineering Physics Division, National Institute of Standards and Technology

  • Andrew A. Herzing

    NIST, Materials Measurement Science Division, National Institute of Standards and Technology

  • Lisa A. Fredin

    Chemical Sciences Division, National Institute of Standards and Technology

  • Thomas C. Allison

    Chemical Sciences Division, National Institute of Standards and Technology

  • Angela R. Hight Walker

    The National Institute Of Standards And Technology, NIST - Natl Inst of Stds & Tech, National Institute of Standards and Technology, The National Institute of Standards and Technology, Engineering Physics Division, National Institute of Standards and Technology

  • David J. Gundlach

    Engineering Physics Division, National Institute of Standards and Technology