Multi-terminal Monolayer WSe2 devices

Two-dimensional transition-metal dichalcogenide (TMD) semiconductors are promising materials for next-generation electronic and optoelectronic devices. WSe2 in particular has shown excellent optical properties, but it has proven difficult to make reliable electrical contacts to this material. We use a new chemical vapor deposition technique to grow monolayer single crystal WSe2 reliably on a large scale with edges up to 15 microns long. We then fabricate these crystals into multi-terminal devices encapsulated in boron nitride using dry transfer techniques. We achieve sufficiently good electrical contacts reproducibly to allow comprehensive study of the intrinsic optical and electrical properties of gated WSe2 monolayers as a function of temperature and magnetic field.