High circular polarization in a MoSe$_{2}$ light-emitting transistor

ORAL

Abstract

The exclusive coupling between the valley degree of freedom and the optical helicity is a unique phenomenon in transition metal dichalcogenides (TMDs), and thus the circularly polarized luminescence is one of the main research topics in these materials. MoSe$_{2}$, however, is known to exhibit exceptionally low polarization in photoluminescence (PL). Here, we report electroluminescence (EL) properties of MoSe$_{2}$ demonstrating electrical switching of the optical helicity in the same manner as WSe$_{2}$ [1]. More importantly, the observed polarization in EL is one order of magnitude higher than that in PL. The present results reveal that the mechanism of EL polarization possesses the intrinsic robustness against intervalley scattering. [1] Y. J. Zhang, et.al., Science 344, 725 (2014).

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Authors

  • Masaru Onga

    Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo

  • Yijin Zhang

    Department of Applied Physics, The University of Tokyo, Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo

  • Ryuji Suzuki

    Department of Applied Physics, The University of Tokyo, Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo

  • Yoshihiro Iwasa

    Department of Applied Physics, The University of Tokyo, The University of Tokyo AND RIKEN CEMS, Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo