Electrical transport properties of ReS2 with polymer electrolyte gating in the high-doping limit

Two-dimensional (2D) materials have emerged as promising candidates for future electronic applications. Among them, transition metal dichalcogenides (TMDs) demonstrate not only potential as ultrathin transistor channel material, but also intriguing spin and valley physics, which in principle could allow new types of devices and circuits. Here we report on the first study of two-dimensional anisotropic ReS2 at high doping levels, enabled by polymer electrolyte gating. Significantly increasing the doping level using electrolyte instead of standard solid gate, we measured an unusual modulation of the conductivity at high carrier densities in monolayer ReS2. In the case of thicker flakes, the effect is milder and an insulator-metal-insulator sequence with increasing doping is observed. Transport measurements provide the evidence of major influence of ionic disorder. Furthermore, we discuss possible band structure effects.