\textbf{Two-dimensional massless Dirac fermions, chiral pseudo-spins, and Berry's phase in few-layer black phosphorus}

ORAL

Abstract

Black phosphorus (BP) and its two-dimensional (2D) derivative phosphorene are rapidly emerging nanoelectronic materials with potential applicability to field effect transistors and optoelectronic devices. Unlike the gapless semiconductor graphene, multilayer BP has a substantial band gap of 0.2 eV, and this band-gap size is predicted being sensitive to the external perturbations such as pressure, strain, and electric field. Very recently, a semiconductor-semimetal transition in BP was realized by the surface potassium (K) doping, producing a Dirac semimetal state with a linear dispersion in the armchair direction and a quadratic one in the zigzag direction [1,2]. Here, based on first-principles density functional calculations, we present that beyond the critical K density, 2D massless Dirac fermions emerge in K-doped few-layer BP, and the electronic states around Dirac points have chiral pseudo-spins and Berry's phase. These features are robust with respect to the spin-orbit interaction. The switchable massless Dirac fermions discussed here may open a new way for the development of high performance devices in 2D materials beyond graphene. [1] J. Kim, S. S. Baik, S. H. Ryu, Y. Sohn, S. Park, B. Park, J. Denlinger, Y. Yi, H. J. Choi, and K. S. Kim, Science \textbf{349}, 723-725, (2015). [2] S. S. Baik, K. S. Kim, Y. Yi and H. J. Choi, arXiv:1508.04932.

Authors

  • Seung Su Baik

    Department of Physics, IPAP, and Center for Computational Studies of Advanced Electronic Material Properties, Yonsei University, Seoul, Korea, Dept. of Physics, IPAP, and CCSAEMP, Yonsei University, Korea

  • Hyoung Joon Choi

    Department of Physics, IPAP, and Center for Computational Studies of Advanced Electronic Material Properties, Yonsei University, Seoul, Korea, Yonsei Univ, Dept. of Physics, IPAP, and CCSAEMP, Yonsei University, Korea, Department of Physics, IPAP, and Center for Computational Studies of Advanced Electronic Material Properties, Yonsei University, Seoul 03722, Korea