Inducing phase transitions of T-like BiFeO$_3$ films by low-energy He implantation

Ferroelectric phase transitions of BiFeO$_3$ are found to be controllable through the application of single axis, out-of-plane strain. Low-energy He implantation has been deployed to induce out-of-plane strain in T-like BFO films, while the compressive in-plane strain due to the coherent growth on LaAlO$_3$ substrates remains fixed. Our data shows that He implantation triggers a $M_C-M_A-T$ phase sequence of the T polymorph that is identical to structural changes that are induced with increasing temperature. Mixed phases nanodomains phases are gradually suppressed and disappear above a certain He doping level. Our data shows that the ferroelectric and optical properties of BiFeO3 films critically depend on the He doping level. Thus, the results demonstrates that He implantation can be used as an intriguing approach to study lines in the rich phase space of BFO films that can’t be accessed by simple heteroepitaxy. This effort was wholly supported by the US Department of Energy (DOE), Office of Basic Energy Sciences (BES), Materials Sciences and Engineering Division, with user projects supported at ORNL’s Center for Nanophase Materials Research (CNMS) which is also sponsored by DOE-BES.