Fabrication and characterization of graphene PN junctions

Theoretical predictions of relativistic Klein tunneling and Veselago lensing in graphene have inspired efforts to fabricate graphene p-n junctions where such phenomena could be realized and studied via electronic transport or scanning tunneling microscopy (STM). Here we will discuss the interplay between device geometry and our measurements in a 4-probe STM, which allows for simultaneous back gating, biasing, and scanning of a micromechanically exfoliated graphene sample. A sharp p-n junction is essential to the manifestation of these aforementioned effects, and we examine the benefits and drawbacks of several routes toward this goal from a fabrication standpoint. These methods include lithographically pre-patterned substrates and the stacking of vertical heterostructures. Finally, we will describe our subsequent characterization results for each, including information about topography and spatial mapping of the density of states.